FQI8N60C Datasheet, ON Semiconductor

FQI8N60C mosfet equivalent, n-channel mosfet.

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Features and benefits

* 7.5 A, 600 V, RDS(on) = 1.2 Ω (Max.) @ VGS = 10 V, ID = 3.75 A
* Low Gate Charge (Typ. 28 nC)
* Low Crss (Typ. 12 pF)
* 100% Avalanche Tested
* RoHS.

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TAGS

FQI8N25

FQI8P10

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